The Ti/c-Si solid state reaction
نویسندگان
چکیده
منابع مشابه
THE Ti / c - Si SOLID STATE REACTION III . The low - temperature reaction kinetics
Thin Ti layers (10 nm) are grown on top of a clean Si(ll1) substrate. Heating these layers initiates a solid state reaction, yielding a monosilicide phase at 350 o C and a C49 disilicide at 450 o C. The present study concerns the growth kinetics of both phases by means of ellipsometry. A diffusion-limited growth kinetics is found for the monosilicide formation. However, two growth rates are obs...
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ژورنال
عنوان ژورنال: Applied Surface Science
سال: 1990
ISSN: 0169-4332
DOI: 10.1016/0169-4332(90)90034-w